Features
• Electrically screened to SMD 5962-15228
• ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . .4kV HBM
• Compatible with ISO11898-2
• Operating supply range . . . . . . . . . . . . . . . . . . . . . 3.0V to 3.6V
• Bus pin fault protection to ±20V
• Undervoltage lockout
• Cold spare: powered-down devices/nodes will not affect
active devices operating in parallel
• Three selectable driver rise and fall times
• Glitch free bus I/O during power-up and power-down
• Full fail-safe (open, short, terminated/undriven) receiver
• Hi-Z input allows for 120 nodes on the bus
• High data rates. . . . . . . . . . . . . . . . . . . . . . . . . . . . up to 5Mbps
• Quiescent supply current . . . . . . . . . . . . . . . 7mA (maximum)
• Low-Power Shutdown mode . . . . . . . . . . . . 50μA (maximum)
• -7V to +12V common-mode input voltage range
• 5V tolerant logic inputs
• Thermal shutdown
• Acceptance tested to 75krad(Si) (LDR) wafer-by-wafer
• Radiation tolerance
- SEL/B immune to LETTH . . . . . . . . . . . . 86.4MeV•cm2/mg
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .75krad(Si)
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)