FEATURES
•300 mW total power dissipation
•Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package
•Improved thermal behaviour due to flat leads
•Self alignment during soldering due to straight leads
•Low collector-emitter saturation voltage
•High current capability

APPLICATIONS
•General purpose switching and muting
•LCD back lighting
•Supply line switching circuits
•Battery driven equipment (mobile phones, video cameras and hand-held devices).

DESCRIPTION
PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.