Features
The following are key features of the MSCSM70AM10CT3AG device:
• SiC Power MOSFET
◦ Low RDS(on)
◦ High-speed switching
◦ Ultra low loss
• SiC Schottky Diode
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature independent switching behavior
◦ Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• Aluminum nitride (AlN) substrate for improved thermal performance

Applications
The MSCSM70AM10CT3AG device is designed for the following applications:
• Uninterruptible power supplies
• Switched mode power supplies
• EV motor and traction drive
• Welding converters