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74HC4052D bảng dữ liệu (PDF) - Toshiba Semiconductor

74HC4052D Datasheet PDF - Toshiba Semiconductor
tên linh kiện 74HC4052D
tải về  74HC4052D tải về
kích thước tập tin   282.45 Kbytes
Page   15 Pages
nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Giải thích chi tiết về linh kiện CMOS Digital Integrated Circuits Silicon Monolithic

74HC4052D Datasheet (PDF)

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74HC4052D Datasheet PDF - Toshiba Semiconductor

tên linh kiện 74HC4052D
tải về  74HC4052D Click to download

kích thước tập tin   282.45 Kbytes
Page   15 Pages
nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Giải thích chi tiết về linh kiện CMOS Digital Integrated Circuits Silicon Monolithic

74HC4052D bảng dữ liệu (HTML) - Toshiba Semiconductor


74HC4052D Thông tin chi tiết sản phẩm

Functional Description
74HC4051D:8-Channel Analog Multiplexer/Demultiplexer
74HC4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer
General
The 74HC4051D, 74HC4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated
with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while
maintaining the CMOS low power dissipation.
The 74HC4051D has an 8 channel configuration and the 74HC4052D has a 4 channel × 2 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal.
For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) Low power dissipation: ICC = 4.0 μA (max) (VCC = 6.0 V, VEE = GND, Ta = 25 )
(3) Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V
(4) High degree of linearity: THD = 0.02 % (typ.) at VCC - VEE = 9 V




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