1 Features
• Qualified for extended temperature applications
– Device temperature:
–55°C to +125°C ambient operating
temperature range
• 3-V to 65-V input range
• Reverse input protection down to –65 V
• Drives external back-to-back N-channel MOSFETs
in common drain and common source
configurations
• Ideal diode operation with 10.5-mV A to C forward
voltage drop regulation (LM74800)
• Low reverse detection threshold (–4.5 mV) with
fast response (0.5 μs)
• 20-mA peak gate (DGATE) turnon current
• 2.6-A peak DGATE turnoff current
• Adjustable overvoltage protection
• Low 2.87-μA shutdown current (EN/UVLO = Low)
• Available in space saving 12-pin WSON package

2 Applications
• Avionics Input reverse polarity protection
– Sensors
– Imaging
– Radar
• Active ORing for redundant power

3 Description
The LM7480 ideal diode controller drives and controls
external back to back N-channel MOSFETs to
emulate an ideal diode rectifier with power path
ON/OFF control and overvoltage protection. The wide
input supply of 3 V to 65 V allows protection and
control of 12-V and 24-V input powered systems.
The device can withstand and protect the loads
from negative supply voltages down to –65 V. An
integrated ideal diode controller (DGATE) drives the
first MOSFET to replace a Schottky diode for reverse
input protection and output voltage holdup. With a
second MOSFET in the power path the device allows
load disconnect (ON/OFF control) and overvoltage
protection using HGATE control. The device features
an adjustable overvoltage cut-off protection feature.
LM7480 has two variants, LM74800 and LM74801.
LM74800 employs reverse current blocking using
linear regulation and comparator scheme versus
LM74801, which supports a comparator based
scheme. With common-drain configuration of the
power MOSFETs, the mid-point can be utilized for
OR-ing designs using another ideal diode. The
LM7480 has a maximum voltage rating of 65 V. The
loads can be protected from extended overvoltage
transients like 200-V unsuppressed load dumps in
24-V battery systems by configuring the device with
external MOSFETs in common source topology.