Features
• 1.8 V to 3.3 V nominal supply
• 3.6 V max. operating
• 4.8 V AMR
• Very high speed: propagation delay of 3 ns maximum guaranteed
• Pure CMOS process
• CMOS output
• Ultra low power
• 300 krad TID targeted
• 125 MeV.cm2/mg SEL free
• 62.5 MeV.cm2/mg SET free

Description
The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate,
designed for radiation hardness and characterized in total ionization dose (TID) and
single event effect (SEE).
It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MILPRF-
38535 to comply with the needs of space applications. It can work from -55 °C
to +125 °C ambient temperature.

Applications
• Oscillators in space applications
• FPGA
• Microcontrollers