1 Features
• 100-V Three Phase Half-Bridge Gate driver
– Drives N-Channel MOSFETs (NMOS)
– Gate Driver Supply (GVDD): 5-20 V
– MOSFET supply (SHx) support upto 100 V
• Integrated Bootstrap Diodes (DRV8300UD
devices)
• Supports Inverting and Non-Inverting INLx inputs
• Bootstrap gate drive architecture
– 750-mA source current
– 1.5-A sink current
• Supports up to 15S battery powered applications
• Higher BSTUV (8V typ) and GVDDUV (7.6V typ)
threshold to support standard MOSFETs
• Low leakage current on SHx pins (<55 μA)
• Absolute maximum BSTx voltage upto 125-V
• Supports negative transients upto -22-V on SHx
• Built-in cross conduction prevention
• Adjustable deadtime through DT pin for QFN
package variants
• Fixed deadtime insertion of 200 nS for TSSOP
package variants
• Supports 3.3-V and 5-V logic inputs with 20 V Abs
max
• 4 nS typical propogation delay matching
• Compact QFN and TSSOP packages
• Efficient system design with Power Blocks
• Integrated protection features
– BST undervoltage lockout (BSTUV)
– GVDD undervoltage (GVDDUV)

2 Applications
• E-Bikes, E-Scooters, and E-Mobility
• Fans, Pumps, and Servo Drives
• Brushless-DC (BLDC) Motor Modules and PMSM
• Cordless Garden and Power Tools, Lawnmowers
• Cordless Vacuum Cleaners
• Drones, Robotics, and RC Toys
• Industrial and Logistics Robots

3 Description
DRV8300U is 100-V three half-bridge gate drivers,
capable of driving high-side and low-side N-channel
power MOSFETs. The DRV8300UD generates the
correct gate drive voltages using an integrated
bootstrap diode and external capacitor for the highside
MOSFETs. GVDD is used to generate gate drive
voltage for the low-side MOSFETs. The Gate Drive
architecture supports peak up to 750-mA source and
1.5-A sink currents.
The phase pins SHx is able to tolerate the significant
negative voltage transients; while high side gate
driver supply BSTx and GHx is able to support
to higher positive voltage transients (125-V) abs
max voltage which improves robustness of the
system. Small propagation delay and delay matching
specifications minimize the dead-time requirement
which further improves efficiency. Undervoltage
protection is provided for both low and high side
through GVDD and BST undervoltage lockout.