Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

* Low Forward Voltage.

* Low Switching noise.

* High Current Capacity

* Guarantee Reverse Avalanche.

* Guard-Ring for Stress Protection.

* Low Power Loss & High efficiency.

* 150℃ Operating Junction Temperature

* Low Stored Charge Majority Carrier Conduction.

* Plastic Material used Carries Underwriters Laboratory