General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Features and benefits
 Excellent ruggedness
 Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band