General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Features and benefits
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (0.5 GHz to 1.4 GHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range