RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors

Device Characteristics (From Device Data Sheet)
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications.

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
   IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
   @ 0.01% Probability)
      Output Power — 300 mWatt
      Power Gain — 11.5 dB
      Efficiency — 25%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead-Free Terminations

Reference Design Characteristics
• Typical Single-Channel W-CDMA Performance: -45 dBc ACPR,
   2.45 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH
   (8.5 dB P/A @ 0.01% Probability)
      Output Power — 350 mWatt
      Power Gain — 12.5 dB
      Efficiency — 26%