Description
The TH50VSF2582/2583AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2582/2583AASB can range from 2.7 V to 3.6 V. The TH50VSF2582/2583AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications.

Features
■ Power supply voltage VCCs = 2.7 V~3.6 V
■ VCCf = 2.7 V~3.6 V
■ Data retention supply voltage
■ VCCs = 1.5 V~3.6 V
■ Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)
■ Block erase architecture for flash memory 8 blocks of 8 Kbytes
■ 63 blocks of 64 Kbytes
■ Organization CIOF CIOS Flash Memory SRAM VCC VCC 2,097,152 words of 16 bits 262,144 words of 16 bits VCC VSS 2,097,152 words of 16 bits 524,288 words of 8 bits VSS VSS 4,194,304 words of 8 bits 524,288 words of 8 bits