PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.

FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

45ns and 40ns maximum address access time (-55^oC to +125^oC)

TTL compatible input and TTL/CMOS compatible output levels

Three-state data bus

Low operating and standby current

  - Operating: 125mA maximum @25MHz

      · Derating: 3mA/MHz

  - Standby: 2mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

  - Total dose: 1E6 rad(Si)

  -  LET_TH(0.25) ~ 100 MeV-cm²/mg

  -  SEL Immune  >128 MeV-cm²/mg

  - Saturated Cross Section cm² per bit, 1.0E-11

  - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

  - Memory cell LET threshold: >128 MeV-cm²/mg

QML Q & V compliant part

  - AC and DC testing at factory

Packaging options:

  - 28-lead 50-mil center flatpack (0.490 x 0.74)

  - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD: 5.0 volts +  10%

Standard Microcircuit Drawing 5962-96891