General Description
This document contains information for the S70FL256P device, which is a dual die stack of two S25FL129P die.
   
Distinctive Characteristics
Architectural Advantages
■ Single Power Supply Operation
    – Full voltage range: 2.7 to 3.6V read and write operations
■ Memory Architecture
    – Uniform 64 kB sectors
    – Top or bottom parameter block (Two 64-kB sectors
        broken down into sixteen 4-kB sub-sectors each) for
        each Flash die
    – Uniform 256 kB sectors (no 4-kB sub-sectors)
    – 256-byte page size
■ Program
    – Page Program (up to 256 bytes) in 1.5 ms (typical)
    – Program operations are on a page by page basis
    – Accelerated programming mode via 9V W#/ACC pin
    – Quad Page Programming
■ Erase
    – Bulk erase function for each Flash die
    – Sector erase (SE) command (D8h) for 64 kB and 256 kB
        sectors
    – Sub-sector erase (P4E) command (20h) for 4 kB sectors
        (for uniform 64-kB sector device only)
    – Sub-sector erase (P8E) command (40h) for 8 kB sectors
        (for uniform 64-kB sector device only)
■ Cycling Endurance
    – 100,000 cycles per sector typical
■ Data Retention
    – 20 years typical
■ Device ID
    – JEDEC standard two-byte electronic signature
    – RES command one-byte electronic signature for backward
        compatibility
■ One-time programmable (OTP) area on each Flash die for
    permanent, secure identification; can be programmed and
    locked at the factory or by the customer
■ CFI (Common Flash Interface) compliant: allows host
    system to identify and accommodate multiple flash devices
■ Process Technology
    – Manufactured on 0.09 µm MirrorBit® process technology
■ Package Option
    – Industry Standard Pinouts
    – 16-pin SO package (300 mils)
    – 24-ball BGA (6 x 8 mm) package, 5 x 5 pin configuration
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