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PXAC261002FC bảng dữ liệu (PDF) - Cree, Inc

PXAC261002FC Datasheet PDF - Cree, Inc
tên linh kiện PXAC261002FC
tải về  PXAC261002FC tải về
kích thước tập tin   634.13 Kbytes
Page   8 Pages
nhà sản xuất  CREE [Cree, Inc]
Trang chủ  http://www.cree.com/
Logo CREE - Cree, Inc
Giải thích chi tiết về linh kiện Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz

PXAC261002FC Datasheet (PDF)

Go To PDF Page tải về bảng dữ liệu
PXAC261002FC Datasheet PDF - Cree, Inc

tên linh kiện PXAC261002FC
tải về  PXAC261002FC Click to download

kích thước tập tin   634.13 Kbytes
Page   8 Pages
nhà sản xuất  CREE [Cree, Inc]
Trang chủ  http://www.cree.com/
Logo CREE - Cree, Inc
Giải thích chi tiết về linh kiện Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz

PXAC261002FC bảng dữ liệu (HTML) - Cree, Inc




Số phần tương tự - PXAC261002FC

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Infineon Technologies A...
PXAC261002FC INFINEON-PXAC261002FC Datasheet
162Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15
PXAC261002FCV1R0 INFINEON-PXAC261002FCV1R0 Datasheet
162Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15
PXAC261002FCV1R0XTMA1 INFINEON-PXAC261002FCV1R0XTMA1 Datasheet
162Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15
PXAC261002FCV1R250 INFINEON-PXAC261002FCV1R250 Datasheet
162Kb / 8P
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Rev. 03.3, 2016-06-15
PXAC261002FCV1R250XTMA1 INFINEON-PXAC261002FCV1R250XTMA1 Datasheet
162Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15
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Mô tả tương tự - PXAC261002FC

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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Infineon Technologies A...
PXAC261212FC INFINEON-PXAC261212FC_16 Datasheet
1Mb / 10P
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
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162Kb / 8P
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Rev. 03.3, 2016-06-15
PTFC262808SV INFINEON-PTFC262808SV Datasheet
180Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Rev. 02.1, 2013-08-02
PTFC262157FH INFINEON-PTFC262157FH Datasheet
1Mb / 10P
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz
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PTFC261402FC INFINEON-PTFC261402FC Datasheet
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PTFC260202FC INFINEON-PTFC260202FC Datasheet
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Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz
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PTFC262808FV INFINEON-PTFC262808FV Datasheet
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Cree, Inc
PXAC261212FC CREE-PXAC261212FC Datasheet
557Kb / 10P
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PTFC262808FV CREE-PTFC262808FV Datasheet
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Giới thiệu về Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

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