The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays
• Pb-Free (RoHS Compliant)

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors