General Description
The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 200 nm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
   — 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors
   — 32Mb (uniform sector models): 64 32Kword (64KB) sectors
   — 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors
   — 16MB (boot sector models): 31 31Kword (64KB) sectors + 8 4Kword (8KB) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical Performance Characteristics
■ High performance
   — 90 ns access time
   — 4-word/8-byte page read buffer
   — 25 ns page read times
   — 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion