Description:

The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

Features:

• High DC Current Gain: hFE = 3000 Typ @ IC = 4A

• Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA

• Low Collector–Emitter Saturation Voltage:

   VCE(sat) = 2V Max @ IC = 4A

               = 3V Max @ IC = 8A

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors