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Nexperia B.V. All right...
|
BUK9K17-60E |
750Kb/13P |
Dual N-channel 60 V, 17 m廓 logic level MOSFET |
| PSMN017-80PS |
805Kb/14P |
N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 3 - 27 September 2011 |
| BUK7K17-80E |
252Kb/12P |
Dual N-channel 80 V, 17 m廓 standard level MOSFET |
| PSMN017-80BS |
805Kb/14P |
N-channel 80 V 17 mΩ standard level MOSFET in D2PAK Rev. 2 - 1 March 2012 |
| PSMN017-30BL |
795Kb/14P |
N-channel 30 V 17 mΩ logic level MOSFET in D2PAK Rev. 2 - 3 April 2012 |
| BUK9K35-60E |
738Kb/13P |
Dual N-channel 60 V, 35 m廓 logic level MOSFET |
| PSMN017-30PL |
795Kb/14P |
N-channel 30 V 17 m廓 logic level MOSFET in TO220 |
| PSMN017-30LL |
483Kb/16P |
N-channel DFN3333-8 30 V 17 m廓 logic level MOSFET |
| BUK7M17-80E |
729Kb/13P |
N-channel 80 V, 17 m廓 standard level MOSFET in LFPAK33 |
| BUK9M17-30E |
724Kb/13P |
N-channel 30 V, 17 m廓 logic level MOSFET in LFPAK33 |
| PSMN017-30EL |
794Kb/14P |
N-channel 30 V 17 m廓 logic level MOSFET in I2PAK |
| BUK9M35-80E |
722Kb/13P |
N-channel 80 V, 35 m廓 logic level MOSFET in LFPAK33 |
| GAN041-650WSB |
315Kb/12P |
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 |
| PDTC114EU |
210Kb/11P |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ 12 August 2022 |
| PDTC114EM |
215Kb/11P |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ 12 August 2022 |
| PDTC114E_SER |
1Mb/17P |
NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 12 - 21 December 2011 |
| PDTC114EMB |
834Kb/12P |
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 - 21 June 2012 |
| PEMD3 |
1Mb/18P |
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 11 - 25 September 2013 |
| PEMB11 |
228Kb/11P |
PNP/PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ 29 December 2022 |
| PEMD3 |
1Mb/18P |
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 11 - 25 September 2013 |