SW8N65A1 / Xian Semipower Electronic Technology Co., Ltd.

SW8N65A1 Datasheet with Chat AI

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Part No.	SW8N65A1
Manufacturer	SEMIPOWER
Size	551 Kbytes
Pages	6 pages
Description	N-channel Enhanced mode TO-220FMOSFET

Datasheet Summary with AI

This is a comprehensive datasheet for the SW8N65A1 MOSFET. Here's a breakdown of the key information:

1. Overview:

️· Device Type: N-Channel MOSFET
️· Manufacturer: SEMIPOWER
️· Application: Power switching, general-purpose applications.

2. Key Electrical Characteristics:

️· VDSS (Drain-Source Voltage): 650V
️· ID (Continuous Drain Current): 8A (at 25°C), 5A (at 100°C)
️· RDS(on) (Drain-Source On-Resistance): 1.2Ω (typical, at VGS = 10V, ID = 4A)
️· VGS(th) (Gate Threshold Voltage): 2-4V
️· PD (Power Dissipation): 31W (at 25°C)

3. Key Features & Performance:

️· High Voltage Capability: Designed for applications requiring 650V operation.
️· Low On-Resistance: Minimizes conduction losses.
️· Avalanche Ruggedness: Can withstand high-energy transients.
️· Thermal Performance: Provides thermal resistance figures for both junction-to-case and junction-to-ambient.

4. Absolute Maximum Ratings:

️· Defines the limits beyond which the device can be damaged. Includes voltage, current, power, and temperature limits.

5. Thermal Characteristics:

️· RthJC (Junction-to-Case Thermal Resistance): 4.03°C/W
️· RthJA (Junction-to-Ambient Thermal Resistance): 44.3°C/W

6. Package: TO-220F

7. Important Notes:

️· The datasheet includes notes regarding repetitive rating limitations, avalanche energy, and temperature dependence.

8. Graphs and Figures:

️· The datasheet includes graphs illustrating characteristics like on-state resistance vs. drain current, safe operating area, and gate charge curves.

In summary, this datasheet provides all the necessary information for engineers to design with the SW8N65A1 MOSFET, including electrical characteristics, thermal performance, absolute maximum ratings, and package details.