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STD85N10F7AG Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector-emitter voltage (vceo) for the std85n10f7ag, based on the provided datasheet?
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  • Part No.STD85N10F7AG
    ManufacturerSTMICROELECTRONICS
    Size986 Kbytes
    Pages16 pages
    DescriptionHigh avalanche ruggedness
    Datasheet Summary with AI

    Okay, here's a summary of the provided document, focusing on the key information about the STMicroelectronics STD85N10F7AG MOSFET:

    Product Overview:

    ️· Part Number: STD85N10F7AG
    ️· Type: N-Channel Super Junction MOSFET in DPAK (TO-252) package.
    ️· Application: Designed for synchronous rectification, DC-DC converters, and other switching applications.

    Key Electrical Characteristics (from datasheet extracts - although the full datasheet isn't included, the information suggests):

    ️· Voltage: 100V
    ️· Current: 85A
    ️· RDS(on): (Very Low On-Resistance) - around 4.4mΩ (typical value indicated)
    ️· Gate Charge (Qg): Approximately 160nC
    ️· Avalanche Ruggedness: Designed to withstand avalanche breakdown.

    Package Information:

    ️· Package Type: DPAK (TO-252) – A surface mount package.
    ️· Package Outline: Details and dimensions provided in figures and tables (see document).

    ️· Packing: Available in tape and reel packaging.

    Important Features:

    ️· Super Junction Technology: Provides lower on-resistance and higher efficiency compared to traditional MOSFETs.
    ️· 100% Avalanche Test: Ensures reliability in demanding applications.
    ️· Low Gate Charge: Minimizes switching losses.

    Document Contents:

    ️· Detailed Electrical Characteristics
    ️· Package Outlines and Dimensions
    ️· Tape & Reel specifications for automated assembly.
    ️· Revision History



    In essence, the document is a datasheet extract and supporting information for the STD85N10F7AG MOSFET, focusing on its electrical performance, package details, and reliability features.

    Product Overview:

    ️· Part Number: STD85N10F7AG
    ️· Type: N-Channel Super Junction MOSFET in DPAK (TO-252) package.
    ️· Application: Designed for synchronous rectification, DC-DC converters, and other switching applications.

    Key Electrical Characteristics (from datasheet extracts - although the full datasheet isn't included, the information suggests):

    ️· Voltage: 100V
    ️· Current: 85A
    ️· RDS(on): (Very Low On-Resistance) - around 4.4mΩ (typical value indicated)
    ️· Gate Charge (Qg): Approximately 160nC
    ️· Avalanche Ruggedness: Designed to withstand avalanche breakdown.

    Package Information:

    ️· Package Type: DPAK (TO-252) – A surface mount package.
    ️· Package Outline: Details and dimensions provided in figures and tables (see document).
    ️· Packing: Available in tape and reel packaging.

    Important Features:

    ️· Super Junction Technology: Provides lower on-resistance and higher efficiency compared to traditional MOSFETs.
    ️· 100% Avalanche Test: Ensures reliability in demanding applications.
    ️· Low Gate Charge: Minimizes switching losses.

    Document Contents:

    ️· Detailed Electrical Characteristics
    ️· Package Outlines and Dimensions
    ️· Tape & Reel specifications for automated assembly.
    ️· Revision History



    In essence, the document is a datasheet extract and supporting information for the STD85N10F7AG MOSFET, focusing on its electrical performance, package details, and reliability features.

    Part No.STD85N10F7AG
    ManufacturerSTMICROELECTRONICS
    Size986 Kbytes
    Pages16 pages
    DescriptionHigh avalanche ruggedness
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