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Hello, Please ask a question about STD85N10F7AG Datasheet
# Example questions:
➢ What is the maximum collector-emitter voltage (vceo) for the std85n10f7ag, based on the provided datasheet?
➢ What is the base quantity of devices per reel when using the dpak (to-252) tape and reel packaging option for the std85n10f7ag?
➢ What type of package is the std85n10f7ag available in, and what is one key dimension (e.g., length, width) specified for it?
Okay, here's a summary of the provided document, focusing on the key information about the STMicroelectronics STD85N10F7AG MOSFET:
Product Overview:
️· Part Number: STD85N10F7AG
️· Type: N-Channel Super Junction MOSFET in DPAK (TO-252) package.
️· Application: Designed for synchronous rectification, DC-DC converters, and other switching applications.
Key Electrical Characteristics (from datasheet extracts - although the full datasheet isn't included, the information suggests):
️· Voltage: 100V
️· Current: 85A
️· RDS(on): (Very Low On-Resistance) - around 4.4mΩ (typical value indicated)
️· Gate Charge (Qg): Approximately 160nC
️· Avalanche Ruggedness: Designed to withstand avalanche breakdown.
Package Information:
️· Package Type: DPAK (TO-252) – A surface mount package.
️· Package Outline: Details and dimensions provided in figures and tables (see document).
️· Packing: Available in tape and reel packaging.
Important Features:
️· Super Junction Technology: Provides lower on-resistance and higher efficiency compared to traditional MOSFETs.
️· 100% Avalanche Test: Ensures reliability in demanding applications.
️· Low Gate Charge: Minimizes switching losses.
Document Contents:
️· Detailed Electrical Characteristics
️· Package Outlines and Dimensions
️· Tape & Reel specifications for automated assembly.
️· Revision History
In essence, the document is a datasheet extract and supporting information for the STD85N10F7AG MOSFET, focusing on its electrical performance, package details, and reliability features.
Product Overview:
️· Part Number: STD85N10F7AG
️· Type: N-Channel Super Junction MOSFET in DPAK (TO-252) package.
️· Application: Designed for synchronous rectification, DC-DC converters, and other switching applications.
Key Electrical Characteristics (from datasheet extracts - although the full datasheet isn't included, the information suggests):
️· Voltage: 100V
️· Current: 85A
️· RDS(on): (Very Low On-Resistance) - around 4.4mΩ (typical value indicated)
️· Gate Charge (Qg): Approximately 160nC
️· Avalanche Ruggedness: Designed to withstand avalanche breakdown.
Package Information:
️· Package Type: DPAK (TO-252) – A surface mount package.
️· Package Outline: Details and dimensions provided in figures and tables (see document).
️· Packing: Available in tape and reel packaging.
Important Features:
️· Super Junction Technology: Provides lower on-resistance and higher efficiency compared to traditional MOSFETs.
️· 100% Avalanche Test: Ensures reliability in demanding applications.
️· Low Gate Charge: Minimizes switching losses.
Document Contents:
️· Detailed Electrical Characteristics
️· Package Outlines and Dimensions
️· Tape & Reel specifications for automated assembly.
️· Revision History
In essence, the document is a datasheet extract and supporting information for the STD85N10F7AG MOSFET, focusing on its electrical performance, package details, and reliability features.
| Part No. | STD85N10F7AG |
| Manufacturer | STMICROELECTRONICS |
| Size | 986 Kbytes |
| Pages | 16 pages |
| Description | High avalanche ruggedness |
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