STK14CA8-R35
AI

The **STK14CA8-R35** is a high-performance **nvSRAM** (non-volatile Static Random Access Memory) manufactured by Infineon Technologies (formerly Cypress Semiconductor). It integrates a standard SRAM cell with a non-volatile QuantumTrap cell in a single chip.
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### 1. Key Technical Specifications
| Parameter | Specification |
| :--- | :--- |
| **Memory Density** | 1 Mbit (128K x 8) |
| **Interface** | Parallel |
| **Access Time** | 35 ns |
| **Operating Voltage** | 2.7V to 3.6V |
| **Package Type** | 32-pin SOIC or 48-pin SSOP |
| **Data Retention** | 20 Years (at 55°C) |
| **Endurance** | 1 Million STORE cycles |
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### 2. Core Functional Components
The STK14CA8-R35 is unique because it combines two types of memory technology:
#### A. SRAM Cell
Used for high-speed read and write operations. It behaves exactly like a standard asynchronous SRAM with a 35ns access time, allowing for unlimited read/write cycles while power is stable.
#### B. QuantumTrap Cell (Non-Volatile)
Every SRAM bit has a corresponding non-volatile element. When power fails, the data from the volatile SRAM is automatically transferred to the QuantumTrap cell.
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### 3. Critical Features
* **AutoStore™:** Using a small external capacitor (connected to the $V_{CAP}$ pin), the device detects power loss and automatically moves all data from SRAM to non-volatile storage without system intervention.
* **Hardware Store/Recall:** Dedicated pins allow the system controller to manually trigger a data backup or restore.
* **Software Store/Recall:** Sequences of specific memory addresses can be used to initiate data transfer operations via software commands.
* **Infinite Read/Write:** Unlike Flash or EEPROM, the "SRAM" portion does not wear out; the endurance limit only applies to the "Store" cycles (moving data to non-volatile memory).
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### 4. Typical Application Circuit
In a standard design, the electrical integration involves:
```c
// Example: Basic memory mapping in C for an MCU interface
#define NV_SRAM_BASE 0x80000000
void write_data(uint32_t offset, uint8_t value) {
*(volatile uint8_t *)(NV_SRAM_BASE + offset) = value;
}
uint8_t read_data(uint32_t offset) {
return *(volatile uint8_t *)(NV_SRAM_BASE + offset);
}
```
* **VCAP Pin:** Must be connected to a capacitor (usually 47µF to 100µF) to provide the energy for the AutoStore operation during power-down.
* **WP (Write Protect):** Hardware protection to prevent accidental data overwrites.
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### 5. Common Use Cases
* **Industrial Controls:** Storing configuration parameters and calibration data.
* **Medical Equipment:** Maintaining critical patient settings during battery failure.
* **Data Loggers:** Ensuring the last recorded data point is saved if power is pulled suddenly.
- ⤷
How does the AutoStore capacitor value impact the backup reliability?
- ⤷ What is the difference between the STK14CA8 and standard EEPROM?
- ⤷ Can you provide a wiring diagram for the VCAP pin?