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  • NTMFS4925NET1G

  • AI
    The **NTMFS4925NET1G** is a high-performance **N-Channel MOSFET** designed by onsemi (formerly ON Semiconductor). It belongs to the Power MOSFET family, specifically optimized for high-efficiency power management and switching applications. --- ### 1. Key Technical Specifications The following table highlights the primary electrical characteristics of the NTMFS4925NET1G: | Parameter | Symbol | Typical Value | | :--- | :--- | :--- | | **Drain-to-Source Voltage** | $V_{DSS}$ | 30 V | | **Continuous Drain Current** | $I_D$ | 46 A (at $T_A = 25^\circ C$) | | **Static Drain-to-Source On-Resistance** | $R_{DS(on)}$ | 8.0 mΩ (at $V_{GS} = 10 V$) | | **Gate Threshold Voltage** | $V_{GS(th)}$ | 1.0 V to 2.2 V | | **Total Gate Charge** | $Q_G$ | 7.2 nC | | **Package Type** | DFN5 | SO-8 Flat Lead | --- ### 2. Physical and Structural Features * **Package (SO-8FL):** It uses a "Flat Lead" package (DFN5), which is designed for low profile and excellent thermal dissipation compared to standard SO-8 packages. * **Lead-Free/RoHS Compliant:** The "G" suffix indicates that the part is Pb-Free and Halogen-Free. * **Low Parasitics:** Designed to minimize internal inductance and resistance, which is critical for high-speed switching. --- ### 3. Functional Advantages The NTMFS4925NET1G is engineered for specific performance benefits: * **High Efficiency:** The low $R_{DS(on)}$ minimizes conduction losses (power wasted as heat when the switch is ON). * **Fast Switching:** Low gate charge ($Q_G$) allows the MOSFET to turn on and off rapidly, reducing switching losses in DC-DC converters. * **Logic Level Drive:** It can be fully driven by low-voltage logic circuits (as low as 4.5V), making it compatible with various microcontrollers and PWM controllers. --- ### 4. Common Applications This MOSFET is typically used in power conversion circuits where space is limited and efficiency is a priority: 1. **DC-DC Converters:** Point-of-load (POL) converters for motherboards and servers. 2. **Battery Management:** Protection circuits and charging modules for portable electronics. 3. **Motor Control:** Small DC motor drivers and H-bridge configurations. 4. **Synchronous Rectification:** Used in the secondary side of power supplies to improve efficiency. --- ### 5. Pin Configuration (DFN5 / SO-8FL) ```text Top View +------------+ | 1 2 3 4 | Pins 1, 2, 3: Source (S) | S S S G | Pin 4: Gate (G) | | | DRAIN | Pins 5, 6, 7, 8 (Bottom Pad): Drain (D) +------------+ ```
    ✨ Follow-up Questions
    • ⤷ What are the thermal resistance characteristics of the DFN5 package?
    • ⤷ How does the RDS(on) change if the gate voltage is lowered to 4.5V?
    • ⤷ What is the maximum power dissipation (Pd) allowed for this MOSFET?