công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

  • M7S58TDJ-R

  • AI
    The **M7S58TDJ-R** is a specialized high-performance electronic component, typically classified as a **DDR4 SDRAM** (Synchronous Dynamic Random Access Memory) chip manufactured by **SK hynix**. Below is a detailed breakdown of its specifications and electronic characteristics. --- ### 1. Key Technical Specifications This component is part of the memory architecture used in high-bandwidth computing environments. | Feature | Specification | | :--- | :--- | | **Memory Type** | DDR4 SDRAM | | **Density** | 8Gb (Gigabit) / 1GB (Gigabyte) | | **Configuration** | 1G x 8 (Internal Banks) | | **Voltage (Vdd)** | 1.2V (Low Power Consumption) | | **Package Type** | FBGA (Fine-pitch Ball Grid Array) | | **Operating Temp** | 0°C to 95°C (Commercial/Extended) | --- ### 2. Functional Architecture The M7S58TDJ-R operates using several advanced electronic mechanisms to ensure data integrity and speed: * **Differential Clocking:** It uses differential clock inputs (CK and /CK) to synchronize data transfers on both the rising and falling edges of the clock signal. * **Data Strobe (DQS):** It utilizes a bi-directional data strobe to facilitate source-synchronous data capture. * **On-Die Termination (ODT):** This internal feature improves signal integrity by reducing reflections on the data bus, eliminating the need for external resistors on the PCB. * **Refresh Cycles:** Like all DRAM, it requires periodic refreshing; however, this specific chip supports **Auto-Refresh** and **Self-Refresh** modes to maintain data while minimizing power draw. --- ### 3. Pinout and Physical Interface Since the chip uses an **FBGA package**, the electronic connections (pins) are small solder balls located on the underside of the component. 1. **Address Inputs:** Used to select specific rows and columns within the memory banks. 2. **Data I/O (DQ):** The bidirectional lines where data is actually sent and received. 3. **Command Pins:** Including RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) to define the operation (Read, Write, Precharge). --- ### 4. Common Applications Due to its high density and speed, the M7S58TDJ-R is frequently found in: * **Server Modules (RDIMMs):** Providing high-capacity memory for data centers. * **Desktop/Laptop RAM:** Used in DDR4 sticks (DIMMs/SO-DIMMs). * **Embedded Systems:** Industrial PCs and networking hardware requiring stable, high-speed volatile memory.
    ✨ Follow-up Questions
    • ⤷ What are the specific timing latencies for the M7S58TDJ-R?
    • ⤷ How does the FBGA package compare to TSOP in terms of thermal performance?
    • ⤷ Is this chip compatible with DDR5 memory controllers?