The **M7S28FDJ-R** is a specific part number typically associated with **NAND Flash Memory** modules, often found in high-performance storage solutions like Solid State Drives (SSDs) or embedded storage systems. Below is a detailed breakdown of its electronic characteristics and specifications. --- ### 1. Component Overview The M7S28FDJ-R is manufactured by SK Hynix. It belongs to the **7th Generation (V7) 4D NAND** flash family. This technology utilizes a "Periphery under Cell" (PuC) architecture to maximize storage density and performance. ### 2. Technical Specifications | Feature | Specification | | :--- | :--- | | **Manufacturer** | SK Hynix | | **Memory Type** | 3D TLC (Triple-Level Cell) | | **Generation** | V7 (176-Layer) | | **Interface** | ONFI (Open NAND Flash Interface) | | **Voltage Supply** | 1.2V / 1.8V / 3.3V (Vcc/Vccq) | | **Package Type** | BGA (Ball Grid Array) | | **Density** | Typically 512Gb or 1Tb (Configuration dependent) | --- ### 3. Key Electronic Characteristics #### A. 4D NAND Architecture Unlike traditional 3D NAND, the "4D" designation refers to placing the peripheral logic circuits underneath the memory cell array. This reduces the die size and improves efficiency by shortening the data paths. #### B. High-Speed Interface This part supports high-speed Toggle or ONFI interfaces, allowing for data transfer rates reaching up to **1600 MT/s** (Mega-Transfers per second) or higher, which is critical for PCIe Gen4 and Gen5 SSDs. #### C. Power Consumption The "R" suffix often denotes specific voltage tolerances or ROHS compliance. The part is designed for low power consumption in idle states, making it suitable for mobile devices and laptops. --- ### 4. Common Applications Due to its high density and high-speed throughput, this component is found in: * **Enterprise SSDs:** Used for data center storage. * **Client SSDs:** High-end NVMe drives for consumer PCs. * **Automotive Systems:** High-capacity infotainment and ADAS storage. ---