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  • IRFPF30

  • AI
    The **IRFPF30** is a high-voltage N-Channel Power MOSFET designed for applications requiring high-speed switching and high-voltage durability. It is part of the HEXFET series by Vishay/International Rectifier. --- ### ## Technical Specifications The following table outlines the primary electrical characteristics of the IRFPF30: | Parameter | Symbol | Value | | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 900 V | | **Continuous Drain Current** | $I_D$ | 3.6 A (at 25°C) | | **Static Drain-Source On-Resistance** | $R_{DS(on)}$ | 3.7 $\Omega$ | | **Total Gate Charge** | $Q_g$ | 54 nC | | **Power Dissipation** | $P_D$ | 125 W | | **Package Type** | - | TO-247AC | --- ### ## Key Features 1. **High Voltage Rating:** With a 900V breakdown voltage, it is ideal for industrial power supplies and high-voltage converters. 2. **Low Gate Charge:** The low $Q_g$ allows for faster switching speeds and reduced drive power requirements. 3. **Dynamic dv/dt Rating:** Provides robustness against rapid voltage spikes, ensuring stability in inductive load switching. 4. **TO-247 Package:** The larger package style allows for better heat dissipation compared to smaller TO-220 units. --- ### ## Pin Configuration The IRFPF30 uses a standard 3-pin layout for power transistors. ```text TO-247 Package Front View _________________ | [ ] | | IRFPF30 | |_________________| | | | 1 2 3 Gate Drain Source ``` 1. **Gate (G):** Used to trigger the MOSFET (Voltage-controlled). 2. **Drain (D):** Connected to the load. 3. **Source (S):** Connected to the ground or negative supply. --- ### ## Common Applications * **Switch Mode Power Supplies (SMPS):** Used in the primary side of AC-DC converters. * **Uninterruptible Power Supplies (UPS):** High-voltage switching in inverter circuits. * **DC-DC Converters:** Step-up converters requiring high breakdown voltages. * **Motor Control:** Driving high-voltage DC motors.
    ✨ Follow-up Questions
    • What are the recommended gate driver circuits for the IRFPF30?
    • How does the RDS(on) change with temperature for this MOSFET?
    • Can the IRFPF30 be used in a parallel configuration for higher current?