BAS70C-AE3-R
AI

The **BAS70C-AE3-R** is a Surface Mount Device (SMD) small signal Schottky barrier diode. It is widely used in high-speed switching and low-voltage applications due to its low forward voltage drop and fast recovery time.
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## 1. Technical Specifications
Below are the primary electrical characteristics and physical parameters:
| Parameter | Specification |
| :--- | :--- |
| **Configuration** | Dual Diode, Common Cathode |
| **Package Type** | SOT-23 |
| **Peak Reverse Voltage ($V_{RRM}$)** | 70 V |
| **Continuous Forward Current ($I_F$)** | 70 mA |
| **Forward Voltage Drop ($V_F$)** | Max 1.0V @ 15mA (Typ 410mV @ 1mA) |
| **Reverse Recovery Time ($t_{rr}$)** | < 5 ns |
| **Operating Temperature** | -55°C to +150°C |
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## 2. Key Features & Internal Logic
The "C" in the part number typically denotes the internal configuration. For the BAS70C:
* **Common Cathode:** Pins 1 and 2 are the individual Anodes, and Pin 3 is the shared Cathode.
* **Schottky Technology:** Unlike standard PN junction diodes, Schottky diodes use a metal-semiconductor junction, allowing for:
* Faster switching speeds.
* Lower power dissipation.
* Minimal stored charge.
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## 3. Pinout Configuration (SOT-23)
The SOT-23 package has three leads, arranged as follows:
```text
[ Pin 3 ] <-- Common Cathode
| |
+----|---|----+
| | | |
| [1] [2] |
+-------------+
^ ^
Anode 1 Anode 2
```
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## 4. Typical Applications
* **Signal Clamping:** Protecting sensitive IC inputs from overvoltage.
* **High-Speed Switching:** Used in digital logic circuits where fast transitions are required.
* **Mixers and Detectors:** Utilized in RF circuits for signal demodulation.
* **Reverse Polarity Protection:** Small-scale protection for low-current sensor lines.
- ⤷
What are the main differences between the BAS70C and the BAS70S (Common Anode) versions?
- ⤷ Can this diode be used for power rectification in high-current power supplies?
- ⤷ What are the advantages of Schottky diodes over standard silicon diodes in RF applications?