3N65G-TM3-R
AI

## 3N65G-TM3-R Technical Overview
The **3N65G-TM3-R** is an N-Channel enhancement mode Power MOSFET designed primarily for high-speed switching applications and power supplies. It is manufactured by UTC (Unisonic Technologies Co., Ltd).
### 1. Key Technical Specifications
The following table summarizes the core electrical characteristics of the device:
| Parameter | Symbol | Typical Value | Unit |
| :--- | :--- | :--- | :--- |
| **Drain-Source Voltage** | $V_{DSS}$ | 650 | V |
| **Continuous Drain Current** | $I_D$ | 3.0 | A |
| **Pulsed Drain Current** | $I_{DM}$ | 12 | A |
| **Static Drain-Source On-Resistance** | $R_{DS(ON)}$ | 3.0 (Max) | $\Omega$ |
| **Gate-Source Voltage** | $V_{GSS}$ | $\pm$30 | V |
| **Total Gate Charge** | $Q_g$ | 12 | nC |
| **Package Type** | - | TO-251 (TM3) | - |
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### 2. Nomenclature Breakdown
The part number follows the standard UTC coding system:
* **3**: Represents the current rating (approx. 3 Amperes).
* **N**: Indicates an N-Channel MOSFET.
* **65**: Indicates the breakdown voltage (650 Volts).
* **G**: Represents a "Halogen Free" or "Green" product.
* **TM3**: Refers to the physical package style (**TO-251**, also known as I-PAK).
* **R**: Indicates the packaging method (Tape and Reel or specific orientation).
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### 3. Core Features & Benefits
* **High Switching Speed:** Optimized for applications requiring rapid transitions between ON and OFF states.
* **Low Gate Charge:** Reduces the power required from the gate driver, improving overall system efficiency.
* **Robust Avalanche Characteristics:** Capable of withstanding high energy pulses (Unclamped Inductive Switching).
* **Low $R_{DS(ON)}$:** Minimizes conduction losses during the "ON" state.
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### 4. Common Applications
The 3N65G-TM3-R is widely used in power management circuits, including:
1. **Switch Mode Power Supplies (SMPS):** Used as the primary switching element.
2. **LED Drivers:** Providing stable current control in lighting systems.
3. **DC-DC Converters:** Efficient voltage regulation for industrial and consumer electronics.
4. **Electronic Ballasts:** Used in fluorescent lighting control.
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### 5. Pin Configuration (TO-251)
Looking at the front of the package (from left to right):
1. **Gate (G):** Controls the MOSFET's switching.
2. **Drain (D):** Connected to the load (internally connected to the metal tab).
3. **Source (S):** Connected to the ground or negative rail.
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What are the equivalent alternative parts for the 3N65G-TM3-R?
- ⤷ How does the TO-251 package differ from the TO-252 (DPAK) version in terms of mounting?
- ⤷ What is the recommended gate drive voltage for optimal performance?