| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Unisonic Technologies |
UP2003
|
253Kb/5P |
P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UP2518
|
117Kb/4P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518
|
114Kb/3P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518-AE3-6-R
|
117Kb/4P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518G-AE3-R
|
114Kb/3P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518G-AE3-R
|
114Kb/3P |
POWER TRANSISTORS
|
|
UP2518L-AE3-6-R
|
117Kb/4P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518L-AE3-R
|
114Kb/3P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518L-AE3-R
|
114Kb/3P |
POWER TRANSISTORS
|
|
UP2518
|
114Kb/3P |
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
|
|
UP2518
|
114Kb/3P |
POWER TRANSISTORS
|
|
UP2790
|
155Kb/5P |
SWITCHING N-AND P-CHANNEL POWER MOSFET
|
|
UP2790G-S08-R
|
178Kb/6P |
SWITCHING N- AND P-CHANNEL POWER MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
UP2790G-S08-R
|
2Mb/8P |
P-Chanel and N-Channel MOSFET use advanced trench technology
|
 Unisonic Technologies |
UP2790
|
178Kb/6P |
SWITCHING N- AND P-CHANNEL POWER MOSFET
|
|
UP2855
|
127Kb/3P |
PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
|
UP2855G-AA3-R
|
127Kb/3P |
PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
|
UP2855L-AA3-R
|
127Kb/3P |
PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
 Cooper Bussmann, Inc. |
UP2B-100
|
512Kb/8P |
Miniature surface mount design
|
|
UP2B-100-R
|
889Kb/7P |
Miniature surface mount design
|