| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Vishay Siliconix |
VB30100S
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
22-Dec-14 |
|
VB30100S
|
139Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S-E3
|
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16 |
|
VB30100S-E3
|
213Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
18-Jun-2018 |
Inchange Semiconductor ... |
VB30100S-E3
|
321Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB30100S-E3-4W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S-E3-8W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
31-Jul-08 |
|
VB30100S-E3/4W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S-E3/4W
|
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16 |
|
VB30100S-E3/8W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
31-Jul-08 |
|
VB30100S-E3/8W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09 |
|
VB30100S-E3/8W
|
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16 |
|
VB30100S-M3
|
88Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
15-May-13 |
|
VB30100S-M3
|
89Kb/4P |
High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
15-Mar-2022 |
Inchange Semiconductor ... |
VB30100S-M3
|
321Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB30100S-M3
|
78Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13 |
|
VB30100S-M3
|
89Kb/4P |
High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
15-Mar-2022 |
|
VB30100SG
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
31-Jul-08 |
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand