10-0B066PA006SB-M992F09

datasheet

23 Jun. 2017 / Revision 3

10

Copyright Vincotech

Inverter Switching Characteristics

figure 9.

FWD

figure 10.

FWD

Typical recovered charge as a f unction of collector current

Typical recoved charge as a f unct ion of IGBT t urn on gate resistor

At

At

300

V

25

°C

At

300

V

25

°C

±15

V

±15

V

64

Ω

6

A

figure 11.

FWD

figure 12.

FWD

Typical peak reverse recovery current current as a f unct ion of collect or current

Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or

At

300

V

25

°C

At

300

V

25

°C

±15

V

±15

V

64

Ω

6

A

0

2

4

6

8

10

0

32

64

96

128

160

192

224

256

288

R

R

R

g o n

g o n

((

(Ω)

Ω)

Ω)

Ω)

0

0,2

0,4

0,6

0,8

0

32

64

96

128

160

192

224

256

288

R

R

R

g o n

g o n

(((Ω)

Ω)

Ω)

Ω)

0

2

4

6

8

10

0

2

4

6

8

10

12

(A)

(A)

(A)

0

0,3

0,6

0,9

1,2

0

2

4

6

8

10

12

(A)

(A)

(A)