R5F56519FDFP datasheet(180/190 Pages) RENESAS

180 / 190 page

R01DS0276EJ0100 Rev.1.00

Page 180 of 190

Aug 24, 2016

RX65N Group, RX651 Group

5. Electrical Characteristics

5.11

Flash Memory Characteristics

Note 1. Definition of reprogram/erase cycle:

The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),

erasing can be performed n times for each block. For instance, when 128-byte programming is performed 64 times for different

addresses in 8-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasing is not enabled (overwriting is prohibited).

Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the

value of the minimum value).

Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.

Table 5.51

Code Flash Memory Characteristics

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V,

Temperature range for programming/erasure: Ta = Topr

Item

Symbol

FCLK = 4 MHz

20 MHz

≤ FCLK ≤ 60 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

NPEC  100 times

128 bytes

tP128

—

1.1

13.2

—

0.52

8 Kbytes

tP8K

—

176

—

32 Kbytes

tP32K

—

299

704

—

136

320

Programming time

NPEC > 100 times

128 bytes

tP128

—

1.4

15.8

—

0.62

7.2

8 Kbytes

tP8K

—

212

—

32 Kbytes

tP32K

—

359

848

—

163

384

Erasure time

NPEC  100 times

8 Kbytes

tE8K

—

216

—

120

32 Kbytes

tE32K

—

329

864

—

183

480

Erasure time

NPEC > 100 times

8 Kbytes

tE8K

—

110

260

—

144

32 Kbytes

tE32K

—

396

1040

—

220

576

Reprogramming/erasure cycle*1

NPEC

10000*2

—

10000*2

——

Times

Suspend delay time during programming

tSPD

—

264

—

120

μs

First suspend delay time during erasing

(in suspend priority mode)

tSESD1

—

216

—

120

μs

Second suspend delay time during

erasure

(in suspend priority mode)

tSESD2

——

1.7

——

1.7

Suspend delay time during erasure

(in erasure priority mode)

tSEED

——

1.7

——

1.7

Forced stop command

tFD

——

μs

Data hold time*3

tDRP

—

Year

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