R5F56519FDFP datasheet(171/190 Pages) RENESAS

171 / 190 page

R01DS0276EJ0100 Rev.1.00

Page 171 of 190

Aug 24, 2016

RX65N Group, RX651 Group

5. Electrical Characteristics

Figure 5.71

DP and DM Output Timing (Full-Speed)

Figure 5.72

Test Circuit (Full-Speed)

Table 5.42

On-Chip USB Full-Speed Characteristics (DP and DM Pin Characteristics)

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 3.0 to 3.6 V, 3.0 ≤ VREFH0 ≤ AVCC0,

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V,

UCLK = 48 MHz,

PCLKA = 8 to 120 MHz, PCLKB = 8 to 60 MHz, Ta = Topr

Item

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Input

characteristics

Input high level voltage

VIH

2.0

—

Input low level voltage

VIL

——

0.8

Differential input sensitivity

VDI

0.2

—

| DP – DM |

Differential common mode range

VCM

0.8

—

2.5

Output

characteristics

Output high level voltage

VOH

2.8

—

3.6

IOH = –200 μA

Output low level voltage

VOL

0.0

—

0.3

IOL = 2 mA

Cross-over voltage

VCRS

1.3

—

2.0

Figure 5.71

Rise time

tFR

—

Fall time

tFF

—

Rise/fall time ratio

tFR / tFF

—

111.11

tFR/ tFF

Output resistance

ZDRV

—

Ω

Rs = 27

Ω included

Pull-up and

pull-down

characteristics

DP pull-up resistance

(when the function controller

function is selected)

Rpu

0.900

—

1.575

Ω

Idle state

1.425

—

3.090

Ω

At transmission and reception

DP/DM pull-down resistance

(when the host controller function

is selected)

Rpd

14.25

—

24.80

Ω

DP, DM

tFF

tFR

90%

10%

90%

VCRS

Observation

point

50 pF



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