STM32F765II datasheet(132/255 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F765xx STM32F767xx STM32F768Ax STM32F769xx

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DocID029041 Rev 4

Table 36. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.3 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM OFF, RTC and

LSE OFF

1.1

1.9

2.4

5(3)

18(3)

38(3)

μA

Backup SRAM ON, RTC and

LSE OFF

1.9

2.7

3.2

6(3)

23(3)

48(3)

Backup SRAM OFF, RTC ON

and LSE in low drive mode

1.7

2.7

3.5

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

1.7

2.7

3.5

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

1.8

2.8

3.6

Backup SRAM OFF, RTC ON

and LSE in high drive mode

1.9

2.9

3.7

Backup SRAM ON, RTC ON

and LSE in low drive mode

2.4

3.4

4.3

Backup SRAM ON, RTC ON

and LSE in Medium low drive

mode

2.4

3.5

4.3

Backup SRAM ON, RTC ON

and LSE in Medium high drive

mode

2.6

3.7

4.5

Backup SRAM ON, RTC ON

and LSE in High drive mode

2.6

3.7

4.5

1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset

OFF), the typical current consumption is reduced by additional 1.2 μA.

2. Guaranteed by characterization results, unless otherwise specified.

3. Guaranteed by test in production.

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