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STM32F479IG bảng dữ liệu(PDF) 102 Page - STMicroelectronics

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Electrical characteristics
STM32F479xx
102/208
DocID028010 Rev 2
Table 30. Typical and maximum current consumption in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA = 25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
VDD =
1.7 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.3 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, RTC and
LSE oscillator OFF
1.7
2.5
2.9
6(3)
18
35(3)
µA
Backup SRAM OFF, RTC and
LSE oscillator OFF
1.0
1.8
2.20
5(3)
15
30(3)
Backup SRAM OFF, RTC ON
and LSE oscillator in Power
Drive mode
1.7
2.7
3.2
7
20
39
Backup SRAM ON, RTC ON
and LSE oscillator in Power
Drive mode
2.4
3.4
4.0
8
25
48
Backup SRAM ON, RTC ON
and LSE oscillator in High
Drive mode
3.2
4.2
4.8
10
29
57
Backup SRAM OFF, RTC ON
and LSE oscillator in High
Drive mode
2.5
3.5
4.1
8
25
48
1. PDR is off for VDD=1.7 V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by
additional 1.2 μA
2. Based on characterization, not tested in production unless otherwise specified.
3. Based on characterization, tested in production.



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