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STM32F479II bảng dữ liệu(PDF) 114 Page - STMicroelectronics

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Electrical characteristics
STM32F479xx
114/208
DocID028010 Rev 2
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from www.st.com.
Figure 30. Typical application with a 32.768 kHz crystal
5.3.10
Internal clock source characteristics
The parameters given in Table 39 and Table 40 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 17.
High-speed internal (HSI) RC oscillator
Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
-
18.4
-
M
Ω
IDD
LSE current consumption
Low power mode(2)
2. LSE mode cannot be changed “on the fly” otherwise, a glitch can be generated on OSCIN pin.
--
1
µA
High drive mode(2)
--
3
ACCLSE(3)
3. This parameter depends on the crystal used in the application. Refer to application note AN2867.
LSE accuracy
-
− 500
-
500
ppm
Gm_crit_max Maximum critical crystal gm
Low power mode(2)
-
-
0.56
µA/V
High drive mode(2)
--
1.5
tSU(LSE)(4)
4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is based on characterization and not tested in production. It is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Startup time
VDD is stabilized
-
2
-
s
Table 39. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user trimming step(2)
--
-
1
%
HSI oscillator accuracy
TA = –40 to 105 °C(3)
− 8-4.5
%
TA = –10 to 85 °C(3)
− 4-
4
%
TA = 25 °C(4)
− 1-
1
%



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