STM32F446ME datasheet(158/201 Pages) STMICROELECTRONICS

158 / 201 page

Electrical characteristics

STM32F446xC/E

158/201

DocID027107 Rev 5

Synchronous waveforms and timings

Figure 54 through Figure 57 represent synchronous waveforms and Table 94 through

Table 97 provide the corresponding timings. The results shown in these tables are obtained

with the following FMC configuration:

•

BurstAccessMode = FMC_BurstAccessMode_Enable;

•

MemoryType = FMC_MemoryType_CRAM;

•

WriteBurst = FMC_WriteBurst_Enable;

•

CLKDivision = 1; (0 is not supported, see the STM32F446 reference manual: RM0390)

•

DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

4THCLK - 2

4THCLK+0.5

tv(NWE_NE)

FMC_NEx low to FMC_NWE low

THCLK

THCLK + 0.5

tw(NWE)

FMC_NWE low time

2THCLK

2THCLK + 0.5

th(NE_NWE)

FMC_NWE high to FMC_NE high hold time

THCLK

tv(A_NE)

FMC_NEx low to FMC_A valid

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

0.5

tw(NADV)

FMC_NADV low time

THCLK – 0.5 THCLK+ 0.5

th(AD_NADV)

FMC_AD(adress) valid hold time after

FMC_NADV high)

THCLK – 2

th(A_NWE)

Address hold time after FMC_NWE high

THCLK

th(BL_NWE)

FMC_BL hold time after FMC_NWE high

THCLK–2

tv(BL_NE)

FMC_NEx low to FMC_BL valid

tv(Data_NADV)

FMC_NADV high to Data valid

THCLK + 1.5

th(Data_NWE)

Data hold time after FMC_NWE high

THCLK + 0.5

Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

9THCLK

9THCLK + 0.5

tw(NWE)

FMC_NWE low time

7THCLK

7THCLK + 2

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high

6THCLK + 1.5

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4THCLK – 1

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