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STM32F446ME bảng dữ liệu(PDF) 148 Page - STMicroelectronics

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STM32F446ME bảng dữ liệu(HTML) 148 Page - STMicroelectronics

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Electrical characteristics
STM32F446xC/E
148/201
DocID027107 Rev 5
6.3.23
VBAT monitoring characteristics
6.3.24
Reference voltage
The parameters given in Table 83 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
6.3.25
DAC electrical characteristics
Table 82. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 83. internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C
1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production
Table 84. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B
Table 85. DAC characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Comments
VDDA
Analog supply voltage
1.7(1)
-3.6
V
-
VREF+
Reference supply voltage
1.7(1)
-3.6
V
VREF+ ≤VDDA
VSSA
Ground
0
-
0
V
-



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