ST7FLITE25F1B6 datasheet(131/166 Pages) STMICROELECTRONICS

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Electrical characteristics

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13.7

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

13.7.1

Functional EMS (Electro Magnetic Susceptibility)

Based on a simple running application on the product (toggling 2 LEDs through I/O ports),

the product is stressed by two electro magnetic events until a failure occurs (indicated by the

LEDs).

●

ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the

device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2

standard.

●

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V

DD and

VSS through a 100pF capacitor, until a functional disturbance occurs. This test

conforms with the IEC 1000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the

Table 76 based on the EMS levels and classes defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

●

Corrupted program counter

●

Unexpected reset

●

Critical data corruption (control registers...)

Table 75.

EEPROM data memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for EEPROM

write/erase

−

2.4

−

5.5

tprog

Programming time for 1~32 bytes

TA=−40 to +85°C

−

510

tret

Data retention(1)

TA=+55°C

(2)

−−

years

NRW

Write erase cycles

TA=+25°C

300K(3)

−−

cycles

Data based on reliability test results and monitored in production.

The data retention time increases when the

TA decreases.

Design target value pending full product characterization.

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