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LCMXO2-640ZE-2TG100C bảng dữ liệu(PDF) 102 Page - Lattice Semiconductor |
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LCMXO2-640ZE-2TG100C bảng dữ liệu(HTML) 102 Page - Lattice Semiconductor |
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102 / 106 page ![]() 5-18 Ordering Information MachXO2 Family Data Sheet R1 Device Specifications The LCMXO2-1200ZE/HC “R1” devices have the same specifications as their Standard (non-R1) counterparts except as listed below. For more details on the R1 to Standard migration refer to AN8086, Designing for Migration from MachXO2-1200-R1 to Standard Non-R1) Devices. • The User Flash Memory (UFM) cannot be programmed through the internal WISHBONE interface. It can still be programmed through the JTAG/SPI/I 2C ports. • The on-chip differential input termination resistor value is higher than intended. It is approximately 200 as opposed to the intended 100 . It is recommended to use external termination resistors for differential inputs. The on-chip termination resistors can be disabled through Lattice design software. • Soft Error Detection logic may not produce the correct result when it is run for the first time after configuration. To use this feature, discard the result from the first operation. Subsequent operations will produce the correct result. • Under certain conditions, IIH exceeds data sheet specifications. The following table provides more details: • The user SPI interface does not operate correctly in some situations. During master read access and slave write access, the last byte received does not generate the RRDY interrupt. • In GDDRX2, GDDRX4 and GDDR71 modes, ECLKSYNC may have a glitch in the output under certain condi- tions, leading to possible loss of synchronization. • When using the hard I 2C IP core, the I2C status registers I2C_1_SR and I2C_2_SR may not update correctly. • PLL Lock signal will glitch high when coming out of standby. This glitch lasts for about 10µsec before returning low. • Dual boot only available on HC devices, requires tying VCC and VCCIO2 to the same 3.3V or 2.5V supply. Condition Clamp Pad Rising IIH Max. Pad Falling IIH Min. Steady State Pad High IIH Steady State Pad Low IIL VPAD > VCCIO OFF 1mA -1mA 1mA 10µA VPAD = VCCIO ON 10µA -10µA 10µA 10µA VPAD = VCCIO OFF 1mA -1mA 1mA 10µA VPAD < VCCIO OFF 10µA -10µA 10µA 10µA |
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