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STM8S105C4B3 bảng dữ liệu(PDF) 101 Page - STMicroelectronics |
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STM8S105C4B3 bảng dữ liệu(HTML) 101 Page - STMicroelectronics |
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101 / 127 page ![]() Unit Max (1) Typ Conditions Parameter Symbol 1 0.7 fADC = 4 MHz 1.5 0.6 fADC = 2 MHz Integral linearity error (2) |EL| 1.5 0.6 fADC = 4 MHz (1) Data based on characterisation results for LQFP80 device with V REF+/VREF-, not tested in production. (2) ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in I/O port pin characteristics does not affect the ADC accuracy. Figure 45: ADC accuracy characteristics 1. Example of an actual transfer curve. 2. The ideal transfer curve 3. End point correlation line ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves. EO = Offset error: deviation between the first actual transition and the first ideal one. EG = Gain error: deviation between the last ideal transition and the last actual one. ED = Differential linearity error: maximum deviation between actual steps and the ideal one. 101/127 DocID14771 Rev 9 Electrical characteristics STM8S105xx |
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