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R5F5671CDDFB bảng dữ liệu(PDF) 165 Page - Renesas Technology Corp

tên linh kiện R5F5671CDDFB
Giải thích chi tiết về linh kiện  Renesas MCUs
PDF  179 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F5671CDDFB bảng dữ liệu(HTML) 165 Page - Renesas Technology Corp

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R01DS0373EJ0120 Rev.1.20
Page 165 of 179
Sep 30, 2024
RX671 Group
2. Electrical Characteristics
Note 1. Definition of program/erase cycle:
The program/erase cycle is the number of program for the same address.
Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to
guarantee all characteristics listed in this table.
Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and
the number of times programming and erasure proceed does not exceed the specified value.
Note 4. These values are based on the results of reliability testing.
Table 2.63
Option Setting Memory Characteristics
Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0,
VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V,
Temperature range for programming/erasure: Ta = Topr
Item
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Program/erase cycles*1
NPEC
1000*2
——
Cycles
Data retention*3, *4
tDRP
20
—
—
Year
Ta ≤ 85°C
10
—
—
Ta ≤ 105°C



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