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STM32L462CEU6 bảng dữ liệu(PDF) 117 Page - STMicroelectronics

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STM32L462CEU6 bảng dữ liệu(HTML) 117 Page - STMicroelectronics

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STM32L462CE STM32L462RE STM32L462VE
Electrical characteristics
174
6.3.8
Internal clock source characteristics
The parameters given in Table 46 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 46. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08
MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2) Duty Cycle
-
45
-
55
%
∆Temp(HSI16)
HSI16 oscillator frequency
drift over temperature
TA= 0 to 85 °C
-1
-
1
%
TA= -40 to 125 °C
-2
-
1.5
%
∆VDD(HSI16)
HSI16 oscillator frequency
drift over VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
%
tsu(HSI16)(2)
HSI16 oscillator start-up
time
--
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
--
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.



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