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STM32L4P5CEU6TR bảng dữ liệu(PDF) 173 Page - STMicroelectronics

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2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2 mode is:
IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is:
I
IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2).
4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
Table 49. Current consumption in Shutdown mode
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-
VDD 25°C
55°C
85°C
105°C 125°C
25°C
55°C
85°C 105°C 125°C
IDD
(Shutdown)
Supply current in
Shutdown mode
(backup registers
retained) RTC
disabled
-
1.8 V
22
155
985
3100
9400
80
358.3
2190
6643 18540
nA
2.4 V
31
190
1150
3600
11000
126
445.2
2533
7530 20760
3 V
44
240
1450
4400
13000
152
527.2
2900
8517 23240
3.6 V
74
340
1900
5650
16500
199
653.7
3410
9798 26260
IDD
(Shutdown with
RTC)
Supply current in
Shutdown mode
(backup registers
retained) RTC
enabled
RTC clocked by
LSE bypassed at
32768 Hz
1.8 V
365
505
1350
3450
9800
-----
2.4 V
565
745
1750
4200
11500
-----
3 V
815
1050
2250
5250
14000
-----
3.6 V
1100
1400
2950
6700
17500
-----
RTC clocked by
LSE quartz(2) in
Low-drive mode
1.8 V
475
640
1550
3800
10000
-----
2.4 V
665
860
1900
4550
11500
-----
3 V
905
1150
2450
5650
14000
-----
3.6 V
1200
1500
3200
7200
17500
-----
RTC clocked by
LSE quartz(2) in
Low-drive mode
LPCAL = 1
LSESYSDIS =1
1.8 V
180
-
-
-
-
-----
2.4 V
190
-
-
-
-
-----
3 V
229
-
-
-
-
-----
3.6 V
293
-
-
-
-
-----
IDD (wakeup
from Shutdown)
Supply current during
wakeup from
Shutdown mode
Wakeup clock is
MSI = 4 MHz(3)
3 V
0.538
-
-
-
-
-----
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.



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