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STM32L4P5CE bảng dữ liệu(PDF) 142 Page - STMicroelectronics

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STM32L4P5CE bảng dữ liệu(HTML) 142 Page - STMicroelectronics

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Electrical characteristics
STM32L4P5xx
142/311
DS12903 Rev 2
6.3.4
Embedded voltage reference
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
Table 24. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference
voltage
–40 °C < TJ < +130 °C 1.182 1.212 1.232
V
tS_vrefint (1)
1. The shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time
when reading the
internal reference
voltage
-4(2)
2. Guaranteed by design.
--
µs
tstart_vrefint
Start time of reference
voltage buffer when
ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer
consumption from VDD
when converted by
ADC
-
-
12.5
20(2)
µA
∆VREFINT
Internal reference
voltage spread over
the temperature range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Average temperature
coefficient
–40°C < TJ < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
300
1000(2)
ppm
VDDCoeff
Average voltage
coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2) ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76



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