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IS25LE128E-RGLA3:P-TY bảng dữ liệu(PDF) 190 Page - Integrated Silicon Solution, Inc

tên linh kiện IS25LE128E-RGLA3:P-TY
Giải thích chi tiết về linh kiện  SERIAL FLASH MEMORY 133/166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  197 Pages
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nhà sản xuất  ISSI [Integrated Silicon Solution, Inc]
Trang chủ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE128E-RGLA3:P-TY bảng dữ liệu(HTML) 190 Page - Integrated Silicon Solution, Inc

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IS25LE256E/128E
IS25WE256E/128E
Integrated Silicon Solution, Inc.- www.issi.com
190
Rev.A9
03/07/2023
9.10 PROGRAM/ERASE PERFORMANCE
Parameter
Typ
Max
Unit
Sector Erase Time (4Kbyte)
100
300
ms
Block Erase Time (32Kbyte)
0.14
0.5
s
Block Erase Time (64Kbyte)
0.17
1.0
s
Block Erase Time (256Kbyte)
0.68
4.0
s
Chip Erase Time
128Mb
30
90
s
256Mb
70
180
s
Page Programming Time
256byte
0.3
1.0
ms
512byte
0.6
2.0
Byte Program
10
50
µs
Note: These parameters are characterized and not 100% tested.
9.11 RELIABILITY CHARACTERISTICS
Parameter
Min
Max
Unit
Test Method
Endurance
100,000
-
Cycles
JEDEC Standard A117
Latch-Up
-100
+100
mA
JEDEC Standard 78
Note: These parameters are characterized and not 100% tested.
9.12 DATA RETENTION CHARACTERISTICS
Parameter
Test Conditions
Typ
Unit
Test Method
Data Retention
100K Program/Erase Cycles, 55°C
120
Year
JEDEC Standard 47K PCHTDR
100K Program/Erase Cycles, 75°C
12.8
Year
Note: These parameters are characterized and not 100% tested.



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