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STM32F446RC bảng dữ liệu(PDF) 107 Page - STMicroelectronics

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STM32F446RC bảng dữ liệu(HTML) 107 Page - STMicroelectronics

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STM32F446xC/E
Electrical characteristics
175
6.3.10
Internal clock source characteristics
The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 16.
High-speed internal (HSI) RC oscillator
Figure 27. LACCHSI versus temperature
1. Guaranteed based on test during characterization.
Table 41. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Guaranteed by design.
--
1
%
TA = - 40 to 105 °C(3)
3. Guaranteed based on test during characterization.
- 8
-
4.5
%
TA = - 10 to 85 °C(3)
- 4
-
4
%
TA = 25 °C(4)
4. Factory calibrated, parts not soldered.
- 1
-
1
%
tsu(HSI)(2)
HSI oscillator
startup time
--
2.2
4
µs
IDD(HSI)(2)
HSI oscillator
power consumption
-
-
60
80
µA



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