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STM32F412RGH3TR bảng dữ liệu(PDF) 118 Page - STMicroelectronics

tên linh kiện STM32F412RGH3TR
Giải thích chi tiết về linh kiện  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
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STM32F412RGH3TR bảng dữ liệu(HTML) 118 Page - STMicroelectronics

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Electrical characteristics
STM32F412xE/G
118/201
DocID028087 Rev 7
Table 51. Flash memory endurance and data retention
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 50. Flash memory programming with VPP voltage
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
6.9
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization, not tested in production.
NEND
Endurance
TA = -40 to +85 °C (temp. range 6)
TA = -40 to +105 °C (temp. range 7)
TA = -40 to +125 °C (temp. range 3)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
1 kcycle(2) at TA = 125 °C
3
10 kcycle(2) at TA = 55 °C
20
Table 49. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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