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STM32H563IIK6 bảng dữ liệu(PDF) 199 Page - STMicroelectronics

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STM32H563IIK6 bảng dữ liệu(HTML) 199 Page - STMicroelectronics

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DS14258 Rev 5
199/270
STM32H562xx and STM32H563xx
Electrical characteristics
238
Figure 51. OCTOSPI HyperBus write
5.3.20
Delay block (DLYB) characteristics
Unless otherwise specified, the parameters given in Table 91 are derived from tests
performed under the ambient temperature, fHCLK frequency and VDD supply voltage
summarized in Table 20, with the following configuration:
5.3.21
DCMI interface characteristics
Unless otherwise specified, the parameters given in Table 92 are derived from tests
performed under the ambient temperature, fHCLK frequency and VDD supply voltage
summarized in Table 20, with the following configuration:
•
DCMI_PIXCLK polarity: falling
•
DCMI_VSYNC and DCMI_HSYNC polarity: high
•
Data formats: 14 bits
•
Capacitive load CL = 30 pF
•
Measurement points done at CMOS levels: 0.5 VDD
•
I/O compensation cell activated
•
HSLV activated when VDD ≤ 2.7 V
•
Voltage scaling VOS0 selected
MSv47734V3
NCS
Access latency
Latency count
Command address
47:40
39:32
31:24
23:16
15:8
7:0
Dn
A
Dn
B
Dn+1
A
Dn+1
B
Host drives DQ[7:0] and the memory drives RWDS.
Host drives DQ[7:0] and RWDS.
CLK, NCLK
RWDS
DQ[7:0]
tw(CS)
tv(RWDS)
tv(CLK)
th(CLK)
High = 2x latency count
Low = 1x latency count
Read write recovery
th(OUT)
tv(OUT)
th(OUT)
tv(OUT)
th(OUT)
tv(OUT)
Table 91. Delay block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tinit
Initial delay
-
750
1100
1700
ps
t∆
Unit delay
-
38
44
54
ps



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