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STM32H563VI bảng dữ liệu(PDF) 153 Page - STMicroelectronics

tên linh kiện STM32H563VI
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STM32H563VI bảng dữ liệu(HTML) 153 Page - STMicroelectronics

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DS14258 Rev 5
153/270
STM32H562xx and STM32H563xx
Electrical characteristics
238
4 MHz low-power internal RC oscillator (CSI)
∆VDD(HSI)
Frequency drift with VDD
(reference is 3.3 V)
VDD= 1.71 to 3.6 V
-0.12
-
0.03
%
∆TEMP(HSI)
Frequency drift with VDD
(reference is 64 MHz)
TJ= -20 to 105 °C
-1(4)
-1(4)
TJ= -40 to 130 °C
-2(4)
-1(4)
tsu(HSI)
Start-up time
-
-
1.4
2.0
μs
tstab(HSI) Stabilization time
At 1% of target frequency
-
4
8
μs
At 1% of target frequency
-
-
4
IDD(HSI)
Power consumption
-
-
300
450
μA
1. Specified by design - Not tested in production, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Trimming value of HSICAL[8:0].
4. Guaranteed by characterization - Not tested in production.
Table 45. HSI oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 46. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI
Frequency
VDD = 3.3 V, TJ = 30 °C
3.96(2)
44.04(2)
MHz
TRIM
User trimming step
Trimming is not a multiple of 16
-
0.40
0.75
%
Trimming is not a multiple of 32
-4.75
-2.75
0.75
Other trimmings are a multiple of 32
(not including multiples of 64 and 128)
-0.43
0.00
0.75
DuCy(CSI)
Duty cycle
-
45
-
55
%
∆TEMP(CSI)
Frequency drift over
temperature
TJ= 0 to 85 °C
-3.7(3)
-4.5(3)
%
TJ= -40 to TJ = 130 °C
-11(3)
-7.5(3)
%
∆VDD(CSI)
Frequency drift over VDD VDD= 1.71 to 3.6 V
-0.06
-
0.06
%
tsu(CSI)
Start-up time
-
-
1
2
μs
tstab(CSI)
Stabilization time
(to reach ± 3% of fCSI)
-
-
-
4
cycle
IDD(CSI)
Power consumption
-
-
23
30
μA
1. Specified by design - Not tested in production, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Evaluated by characterization - Not tested in production.



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